X-ray reflectometer Nanolaboratory "MINILAB-6", nanotechnology, x-ray reflectometry, thin films diagnostics

X-ray reflectometer - Nano laboratory MINILAB-6 - nanotechnology (capillary x-ray optics are used)

X-RAY REFLECTOMETER	MINILAB - 6 Advanced analytical system for nanostructure investigations
	Introduction X-ray reflectometry is now widely used in science and technology to measure and monitor thin film thickness, roughness of super- smooth surfaces, period of multilayer nanostructures and surface layer density. An X-ray Reflectometer X-Ray MiniLab manufactured by the Institute for Roentgen Optics (IRO) is now the most powerful tool in this X-ray metrology due to its unique features providing simultaneous measurements with a number of spectral lines. The X-ray reflectometer is specifically designed for diagnostics of thin films and interfaces. But due to flexible scheme it can also ensure standard X-ray techniques. The IRO X-ray Reflectometer is based on latest developments in semitransparent monochromators, Kumakhov polycapillary optics, and unique patented design. We offer a genuine Minilab with unmatched combination of analytical features. Complex of X-ray devices Based on X-ray Reflectometer
5 Basic Operation Modes: ¨ Reflectometry ¨ Diffractometry ¨ Refractometry ¨ Small-angle scattering ¨ X-ray fluorescence
Try and enjoy advantages of simultaneous measurements in different spectral bands
Technical Specification
Controlled parameters: ¨ Surface and interface roughness (down to 0.05 nm) ¨ Thin layer thickness (1-300 nm) ¨ Structure period ( 0.1 nm ) ¨ Surface layer density ¨ Radius and concentration of nano-particles ¨ Composition of layers ¨ Radius of curvature (up to 300m) Layered structure period Software codes for: ◊ system operation ◊ system testing ◊ reflectometry and refractometry data procession ◊ crystal parameters data-base (optional)	Goniometer system: Minimum angle step – 0,0002^o (0,7²) angle range -145^o (2q-detector axis) -180 (w-sample axis) sample linear translation with 2,5 mm step, range 100 mm maximum sample size – 200 mm X-ray tube power supply: High voltage range 10-45 kV Power – 300 W (500 W optional) Power stability – 0,01% Closed water cooling system with distilled water Detection system: ◊ 3 scintillation channels ◊ Cooled Si-detector with a spectrum analyzer *Dimensions, mm (length x width x hight): ◊ Reflectometer X-ray scheme – 950 ´ 500 ´ 450 ◊ Operation table – 1200 ´ 700 ´ 780 ◊ Device in protective housing – 1200 ´ 700 ´ 1370 System weight, kg:* ◊ Reflectometer X-ray scheme – 35 ◊ Device in protective housing – 135
New patented X-ray optical scheme of X-ray reflectometer MiniLab

	Spectral lines are selected from the beam by tuning semitransparent monochramators to the predetermined Bragg angles. The X-ray scheme provides simultaneous measurements with two spectral lines (standard anode) and with three ones (composed anode) in this X-ray reflectometer
*Short Application Notes on X-ray Reflectometer* Measurements of nano-size oxide layers
Mode 1: Relative reflectometry mode	Provided now only by X-Ray reflectometer MiniLab Unique method of intensity contrast development
EXAMPLE 1 Determination of very thin oxide layers
Sample description Substrate: Si wafer Film: Ni (900 nm) deposited by magnetron sputtering Exposed to air atmosphere during 3 months after the preparation. Fig.1. Angle dependence of reflected intensity ratio I(CuK_a)/I(CuK_b): dots –experiment, solid line - mathematical simulation for idea. vacuum-Ni interface Measured data: film thickness d(NiO_x)=3,0 nm, NiO_x composition x=1,9, film density r(NiO_x)=5,5 g/cm³, surface roughness s=0,5 nm
EXAMPLE 2 Investigation of ion-implanted samples
Sample description Substrate: Si wafer with 42,5 nm oxide film F+ - 40 keV, D=9,25 10¹⁵ ion/cm² Fig. 2. Angle dependence of reflectivity for F⁺ -implanted sample at l₁=0,154 nm (1) and l₂=0,139 nm (2) Absence of intensity contrast in small angle range 2q<1^o.
Fig. 3. Angle dependence of the reflectivity ratio R(l₁)/R(l₂) for F⁺ -implanted sample at l=0,154 nm and l=0,139 nm (2) Intensity contrast development in small angle range 2q<1^o.
Mode 2: Diffraction
EXAMPLE 2
Scheme Bragg-Brentano focusing scheme Samples – powders of aspirin and zeolite/ X-ray power – 28 kV, 10 mA Fig. 2. q-2q diffraction scan of aspirin powder.

EXAMPLE 3
Repeatability test Two successive scans with two-hours interval: first – solid line, second - dots . Fig. 3. q-2q diffraction scan of zeolite powder
Mode 3: X-ray fluorescence
EXAMPLE 4
Sample: magnetic memory disc Detection: Semiconductor Si-detector, 7 mm² X-ray source: Cu-anode X-ray tube, 30 kV, 1 mA Collimation: Polycapillary Kumakhov lens, focus spot 400 mm. Fig. 4. X-ray fluorescence spectrum from magnetic memory layer.
Mode 4: X-ray refraction	Provided now only by X-Ray reflectometer MiniLab
EXAMPLE 5
Sample description Substrate: Si wafer Bilayer structure: C(33 nm) - Ni (120 nm) deposited by thermal evaporation Direct determination of the thin film density Fig. 5. Refractogram of bilayer structure C-Ni/Si, grazing angle Θ=-0,08^o.